NSTI Nanotech 2009

Enhanced UV Light Emission in Silicon nanoparticles

A.K. Singh, K.G. Grycznski, B. Rout, J. Li, F. McDaniel, A. Neogi and G. Sahu, H. Lenka, D.P. Mahapatra
Department of Physics, University of North Texas, US, and Institute of Physics, Bhubaneswar, IN

Keywords: silicon photonics, UV emission, fluorescence


UV light emission comparable to GaN based semiconductor is observed from gold-implanted Si (100) semiconductors. A low energy Au implant forming the Si nanoparticles or quantum dots are been irradiated and recrystallized by a MeV range Au-Ion beam. Si quantum dots are formed which shows exciton transitions at low temperature. These Si quantum dots emit with a peak emission of ~ 3.27 eV at 300 K, which is shifted to about 3.37 eV at 77 K. Time resolved photoluminescence measurements from Si nanoparticles reveal ns-ps decay features exhibiting strong radiative recombination process. These decay features are significantly faster than conventional amorphous or poly-Si nanocrystals which are dominated by Auger recombination process in the micro-second range. This role of surface-plasmon polariton induced enhancement in the PL emission process is also discussed
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