NSTI Nanotech 2009

Optical and Electrical Characterization of Single GaSb Nanowire Field Effect Transistor

W. Xu, A. Chin, L. Ye, C-Z Ning, H. Yu
Arizona State University, US

Keywords: transport, Schottky barrier, photo-current, space charge


The fabrication and characterization of GaSb nanowire Field Effect Transistor (FET) was presented. The photoluminescence (PL) and Raman were performed on single wire to verify the GaSb property before transport study. The temperature dependent current-voltage characteristic shows asymmetric current through the device due to asymmetric back to back Schottky contacts at the two ends of the wire and the Schottky barrier can be estimated by applying Arrhenius plots. A transition from linear IV curve at small bias to the Space-Charge-Limited Current (SCLC) at higher bias was clearly observed and the nanowire surface traps energy distribution can be estimated. The gate response results indicate the unintentionally doped nanowire to be n-type. By shining the light, clear photo response was observed and further measurements will be studied. This work provides a method on analyzing the nanowire Schottky current-voltage characteristics and the space-charge-limited current behavior, as well as the optical properties based on GaSb nanowire device.
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