NSTI Nanotech 2009

Nanostructured 1D-FET for Remote Sensing Applications

K.T. Chiang, B. Lanning
Southwest Research Institute, US

Keywords: field effect transistor, sensor


Central to the mechanism of detection within a sensor is the transduction of a signal associated with selective recognition of a parameter of interest. Nanometer-scale structures have the potential to provide increased sensitivity (signal gain) and selectivity relative to existing sensor devices. The FET device structure, including the 1-D channel structures, were produced using scalable semiconductor processing methods that enable system-level integration (and integration across length scales) at a 1 cm  1 cm chip size. Semiconducting channels (p-doped silicon) on the order of 50-100 nm in height and width and 2 Ám in length, were fabricated using e-beam lithography with the remaining FET features and conducting traces fabricated using standard semiconducting processes. The device structure was characterized using scanning electron microscopy and atomic force microscopy. The 1-D channel structure was shown to behave as an FET device (i.e., with variation in the channel resistance upon application of a current across the source to drain electrodes for a constant applied voltage at the gate electrode). To demonstrate functionality as an environmental/chemical sensor, a Nafion-receptive layer was deposited onto the 1-D device. The nanostructured sensor was then used to detect the variation of relative humidity covering the range of 10 to 100%. The demonstrated novel sensing device presented herein is part of a unique, MEMs-scale, monolithically integrated wireless (remote) detection system.
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