NSTI Nanotech 2009

SPICE BSIM3 Model Parameters Extraction and Optimization for Low Temperature Application

H. Abebe, V. Tyree, N.S. Cockerham

Keywords: device modeling, MOSFET, parameter extraction, SPICE


The SPICE BSIM3v3.1 model parameters extraction and optimization strategy that we present here is applicable for a half micron technology and circuits operating at temperature ranging from -191 to 125 0C. The room temperature extraction and optimization strategy [1] is used as basis to extract the temperature dependent BSIM3v3.1 model parameters. The final extracted model parameters accuracy is evaluated by comparing simulations of a 31-stage ring oscillator with measured data.
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