NSTI Nanotech 2009

Carbon nanofibers as interconnects in CMOS technology

J.R. Jameson, F. Madriz, T. Yamada, C.Y. Yang
Santa Clara University, US

Keywords: high frequency, circuit model, breakdown, heating, carbon nanofiber


Scaling CMOS technology beyond the 32nm node presents many challenges, as described in the International Technology Roadmap for Semiconductors. For over a decade, research has been conducted to determine whether solutions to any of these problems can be provided by carbon-based nanostructures, such as nanotubes, Bucky balls, nanofibers and, more recently, graphene. This paper summarizes two recent results from research on CMOS applications of carbon nanofibers, namely the their electrical response at high frequency (up to 50 GHz) and their current-induced breakdown. The experimental results and theoretical understanding are discussed for both topics. These examples illustrate two important electrical characteristics of carbon nanofibers as potential interconnects in next-generation CMOS technology, and highlight a need for continued study.
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