NSTI Nanotech 2009

PSP Model Equations Extension for Statistical Estimation of Leakage Current in Nanometer CMOS Technologies Considering Process Variations

C. D’Agostino, P. Flatresse, E. Beigne, M. Belleville
STMicroelectronics, FR

Keywords: Statistical, Variability, PSP, CMOS


A novel analytical methodology is proposed for statistical leakage estimation of CMOS circuits considering statistical process variations. The goal of the proposed methodology is to obtain a time-efficient and accurate estimation of the PDF of the leakage current of a complete digital circuit, without using time consuming Monte-Carlo simulations. The methodology consists mainly in the integration of probability equations directly into the PSP model
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