2008 NSTI Nanotechnology Conference and Trade Show - Nanotech 2008 - 11th Annual

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Clean Technology 2008

2D Mapping Modeling of Twin Silicon Nanowire FETs(TSNWFETs)

H-G Kim, T. Won
Inha University, KR

nanowire, FinFET, mapping model

In this paper, we report our quantum mechanical study on the nanoscale, short channel Double Gate (DG) and Gate all around (GAA) MOSFETs through 3D to 2D mapping scheme in order to take into account the multi-dimensionality of the body potential and the electronic charge distribution. Our simulation revealed that the device electrostatics is dominated by capacitive coupling between electrodes and the DG results can be successfully extended to the GAA MOSFETs cases as well by performing an appropriate device scaling to compensate for differences in gate control between the two devices. Our model was verified by comparison the results with Mutiple channel FETs (McFETS) and Twin Silicon Nanowire MOSFETs (TSNWFET)

Nanotech 2008 Conference Program Abstract