2008 NSTI Nanotechnology Conference and Trade Show - Nanotech 2008 - 11th Annual

Partnering Events:

TechConnect Summit
Clean Technology 2008

Alternative Approach for the Fabrication and Characterization of Carbon Nanotube Based-Nanodevices

J. Jiao, J.F. Wu, D. McClain
Portland State University, US

carbon nanotube, electron field emitter, field effect tansistor, nanofabrication, electrical characterization

The development of an effective methodology for controlled fabrication of carbon nanotube (CNT) based-nanodevices, and an ability to accurately characterize their electronic properties, are critical for the realization of CNT-based electronics. We introduce here new progress on the fabrication of CNT field emitter arrays and CNT field effect transistors (FETs) by using a combination of dual-beam focused ion beam and the plasma enhanced chemical vapor deposition (PECVD) technique. Our electrical characterization was performed using a unique ultra-high-vacuum (UHV) probe station. Comparison of a large number of CNTFETs suggests that the effect of O2 absorbates has a profound impact on the electron transport properties of devices. Statistical analysis of all devices indicates shifts in both channel and contact performance indicative of both charge transfer in the bulk of the nanotube and transport barrier modulation at the tube-electrode interface. Distinctly different behavior is observed depending on the number and nature of the bridging CNTs. Contact resistance, transport character and threshold voltage of the device with respect to the preparation conditions were systematically characterized. It is expected that this comprehensive study on CNT synthesis and device fabrication will provide guidelines for the advancement of CNT-based-nanodevices.

Nanotech 2008 Conference Program Abstract