2008 NSTI Nanotechnology Conference and Trade Show - Nanotech 2008 - 11th Annual

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Construction of a Compact Modeling Platform and Its Application to the Development of Multi-Gate MOSFET Models for Circuit Simulation

M. Miura-Mattausch, M. Chan, J. He, H. Koike, H.J. Mattausch, T. Nakagawa, Y.J. Park, T. Tsutsumi, Z. Yu
Hiroshima University, JP

multi-gate MOSFET, compact model

We are reporting the construction of a common platform for compact model development based on the Verilog-A language and in particular a framework for efficient development of multi-gate MOSFET models for circuit simulation. Phenomena expected to become important for the multi-gate MOSFET generation are modeled on the basis of their physical origin. These phenomena are implemented into the specific multi-gate MOSFET models by plugging in modules from the common platform. Parasitic resistive and capacitive contributions are also modularized to represent the complete circuit performance of the multi-gate MOSFET model for efficient circuit development.

Nanotech 2008 Conference Program Abstract