2008 NSTI Nanotechnology Conference and Trade Show - Nanotech 2008 - 11th Annual

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TechConnect Summit
Clean Technology 2008

A simple route to synthesize impurity-free high-oriented SiOx nanowires

S.C. Chiu, Y.Y. Li
National Chung Cheng University, TW

silicon oxide, nanowire, thermal evaporation

Impurity-free silicon oxide nanowires were synthesized on a 3 cm x 3 cm alumina plate uniformly by thermal evaporation of a mixture of powder of graphite powders and Si-SiOx particles under argon atmosphere with a flow rate of 50 sccm at 1100 oC for 3 hours. The as-synthesized products characterized by field-emission scanning electron microscopy, field-emission transmission electron microscopy and energy-dispersive spectroscopy show that SiOx nanowires were of diameters ranging from 50-100 nm and the height is up to several millimeters. The growth mechanism of SiOx nanowires was studied and suggested to be the vapor-solid (VS) process.

Nanotech 2008 Conference Program Abstract