2008 NSTI Nanotechnology Conference and Trade Show - Nanotech 2008 - 11th Annual

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Clean Technology 2008

Growth of GaN nanowire networks using porous alumina templates

L. Menon, Z. Wu, M.G. Hahm, Y.J. Jung
Northeastern University, US

semiconductor, chemical vapor deposition

We describe our results on the growth of single crystal GaN nanowires on Ni-patterned sapphire wafers by means of chemical vapor deposition. We show a strong dependence of morphology and orientation of nanowires on catalyst parameters, such as deposition mode of the catalyst and also the dimensions of the catalyst. For example for very large catalyst dimensions, several nanowires are seen to grow from a single catalyst and the wires grow vertical to the surface of the substrate. On the other hand for very small dimensions of the catalyst, the GaN orientation is seen to demonstrate an epitaxial network-like growth pattern. High resolution scanning electron microscopy, atomic force microscopy and Raman spectroscopy measurements indicate a marked difference in structural and optical properties as a function of growth pattern. These results may be indicative of reduced defects and strain effects in epitaxially grown nanowires. Such nanowires are expected to have important applications in advanced nanoscale optoelectronic devices.

Nanotech 2008 Conference Program Abstract