2008 NSTI Nanotechnology Conference and Trade Show - Nanotech 2008 - 11th Annual

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TechConnect Summit
Clean Technology 2008

Fabrication & Integration of nanobolometer sensors on a MEMs process

S.F. Gilmartin, K. Arshak, D. Collins, D. Bain, W.A. Lane, O. Korostynska, A. Arshak, B. McCarthy, S.B. Newcomb
Analog Devices, IE

fabrication, MEMS, bolometer, nanobolometer

In this paper, we report the fabrication of novel nanoscale bolometer sensor devices using conventional titanium and titanium-nitride metal films, with total bolometer film thicknesses ranging from 60-150nm. The bolometer devices we present are integrated with a MEMs/CMOS fabrication process, to combine silicon micromachined thermal isolation with nanoscale sensor feature critical dimensions (CDs), for high-sensitivity uncooled bolometer operation and TCR performance comparable to equivalent microscale bolometer devices. We report 70nm metal nanosensor element minimum CDs. We have achieved the nanoscale metal CDs using electron beam nanolithography, and conventional microscale metal deposition and plasma etch technology. By combining nanolithography with conventional microscale metal deposition and etch processing, we have created nanobolometer devices that integrate with conventional MEMs and microscale CMOS/BICMOS fabrication technology, while maintaining sensor TCR performance at nanoscale CDs.

Nanotech 2008 Conference Program Abstract