2008 NSTI Nanotechnology Conference and Trade Show - Nanotech 2008 - 11th Annual

Partnering Events:

TechConnect Summit
Clean Technology 2008

Analytical Modelling and Performance Analysis of Double-Gate MOSFET-based Circuit Including Ballistic/quasi-ballistic Effects

S. Martinie

double-gate MOSFET, ballistic/quasi-ballistic transport, compact model, ring oscillator

As the MOSFET continues to shrink rapidly, emerging physical phenomena, such as ballistic transport, have to be considered in the modelling and simulation of ultra-scaled devices. Future Double-Gate MOSFETs, designed with channel lengths in the decananometer scale, are expected to be more ballistic or quasi-ballistic than diffusive. At this level of miniaturisation is essential to directly evaluate the impact of ballistic and quasi-ballistic transport at circuit level through simulation of several circuit demonstrators. In this work we demonstrate the feasibility of a simulation study of ballistic/quasi-ballistic transport at circuit level and we show the impact this advanced transport on the commutation of CMOS inverter and the oscillation frequency of ring oscillator.

Nanotech 2008 Conference Program Abstract