2008 NSTI Nanotechnology Conference and Trade Show - Nanotech 2008 - 11th Annual

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TechConnect Summit
Clean Technology 2008

Quasi-2D Surface-Potential Solution to Three-Terminal Undoped Symmetric Double-Gate Schottky-Barrier MOSFETs

G. Zhu, G.H. See, X. Zhou, Z. Zhu, S. Lin, C. Wei, J. Zhang, A. Srinivas
Nanyang Technological University, SG

Quasi-2D, Schottky barrier, three terminal, undoped, double-gate

The quasi-2D method has been used to account for short-channel effects in PN-junction MOSFETs. Recently some authors applied the quasi-2D solution to SB MOSFETs to derive potential profiles. In this paper, an improved quasi-2D solution is proposed which is valid for arbitrary terminal bias with respective to any reference voltage and applicable to asymmetric SB-DG devices. A terminal-bias dependent characteristic length is physically derived, which has been missed in all previous literature.

Nanotech 2008 Conference Program Abstract