2008 NSTI Nanotechnology Conference and Trade Show - Nanotech 2008 - 11th Annual

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Clean Technology 2008

Impact of Non-Uniformly Doped and Multilayered Asymmetric Gate Stack Design on Device Characteristics of Surrounding Gate MOSFETs

H. Kaur, S. Kabra, S. Haldar, R.S. Gupta
University of Delhi, IN

asymmetric gate stack, hot carrier effects, short channel effects, non-uniformly doped design, surrounding gate MOSFET

In the present work, a new structural concept, non-uniformly doped multilayered asymmetric gate stack (ND-MAG) surrounding gate MOSFET has been proposed and it has been demonstrated using analytical modeling and simulation that ND-MAG SGT leads to suppression of short channel and hot carrier effects besides also improving the transport efficiency and gate controllability as compared to UD devices. The device design thus provides an effective solution to the detrimental issues such as short channel effects besides also improving the device performance and thus allows the device to be scaled more effectively.

Nanotech 2008 Conference Program Abstract