2008 NSTI Nanotechnology Conference and Trade Show - Nanotech 2008 - 11th Annual

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Clean Technology 2008

Atomistic Simulation on Boron Transient Diffusion during in Pre-amorphized Silicon Substrate

S-Y Park, B-G Cho, T. Won
Inha University, KR

transient enhanced diffusion, pre-amorphization implant, kinetic Monte Carlo

We investigated the boron diffusion in the silicon posterior to PAI (pre-amorphization implant) in order to understand the mechanism for amorphization process and generation-recombnation of defects. Silicon atoms were weighed as a new pre-amorphization implant (PAI) sources and we compared the effects of Si-PAI with those of Ge-PAI at the same condition. The Kinetic Monte Carlo (KMC) investigation of the interstitial distribution revealed that Si-PAI produces more amounts of interstitials than the case of Ge-PAI whilst Ge-PAI makes interstitials move further up to the surface than the Si-PAI case during the annealing process.

Nanotech 2008 Conference Program Abstract