2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Effects of N Incorporation on the Photoluminescence and Structural Characteristics of GaSb:N/GaSb Single Quantum Wells

L. Wu, S. Iyer, S. Potoczny and K. Matney
North Carolina A&T State University, US

molecular beam epitaxy, GaSbN single quantum wells, photoluminescence, XRD

In this paper, the structural and optical properties of GaSb:N single quantum wells grown on GaSb substrates by solid source molecular beam epitaxy, for N incorporation varying up to about 2%, have been investigated. Presence of Pendullosung fringes in all the samples investigated indicates SQWs of good quality with abrupt interface. Low temperature photoluminescence (PL) exhibited sharp PL features below the band edge transitions of GaSb. These were attributed to the excitons bound to nitrogen centers in the GaSb mid gap. No significant effect of in-situ annealing in Sb ambient on the PL features was observed while ex-situ annealing in N ambient led to the reduction of these centers.

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