2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Design of Radiation Tolerant Readout System for an Integrated SRAM Based Neutron Detector

P. Malinowski, D. Makowski, G. Jablonski and A. Napieralski
Technical University of Lodz, PL

single event effect, single event upset, Hamming codes, cyclic redundancy check, state machine, static random access memory, neutron radiation, nanotechnology, microelectronics

This paper presents a design of a radiation tolerant readout system for an SRAM-based neutron detector. The radiation tolerance has been achieved on the system level by applying Error Detection and Correction schemes. The constructed system concerns using state machines immune to Single Event Upsets induced by neutron radiation.

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Nanotech 2007 Conference Program Abstract


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