2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Theoretical study of Graphene Nanoribbon Field-Effect Transistors

G. Liang, N. Neophytou, D. Nikonov and M. Lundstrom
Purdue Unioversity, US

MOSFET, carbon nanoribbon, CNR

In this work, we theoretically studied the electronic structure of CNRs using pz-orbital tight-binding model as well as a simple analytical formula. Moreover, the ballistic performance of CNR MOSFETs using a semi-classical “top-of-the-barrier” MOSFET model is investigated. 5nm wide CNR MOSFETs show comparable performance with 1.6 nm diameter CNT MOSFETs, and outperform silicon MOSFETs by over 100%.

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Nanotech 2007 Conference Program Abstract


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