2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

HiSIM2.4.0: Advanced MOSFET model for the 45nm Technology Node and Beyond

M. Miura-Mattausch, N. Sadachika, M. Miyake, D. Navarro, T. Ezaki and H.J. Mattausch, T. Ohguro, T. Iizuka, M. Taguchi, S. Miyamoto, R. Inagaki and Y. Furui
Hiroshima University, JP

MOSFET, surface potential, 45nm technology, compact model

HiSIM realizes both accurate and fast circuit simulation. The newly developed HiSIM2.4.0 includes required features in modeling for the 45nm technology node and beyond such as the STI stress effect. A major development is an improved model consistency, which enables modeling of the technology variation accurately. HiSIM2.4.0 includes also the binning option to take into account newly appearing device features which are not modeled yet.

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Nanotech 2007 Conference Program Abstract


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