2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Nanoscale Device Modeling and Simulation: Multiple Independent gate Field Effect Transistor

H-G Kim
Inha University, KR

MIGFET, SCE, Quantum Mechanical

we report our numerical modeling and simulation results for MIGFET. The simulation result revealed that MIGFET demonstrates dynamic modulation of sub-threshold swing and threshold voltage by biasing the second gate. And Short channel effects are appreciably suppressed for MIGFET in terms of DIBL, voltage roll-off.

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Nanotech 2007 Conference Program Abstract


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