2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Atomistic Modeling for Boron Diffusion in Strained Silicon Substrate

Y-K Kim, K-S Yoon, J-S Kim, H-G Kim and T. Won
Inha University, KR

atomistic modeling, strained silicon, Boron, stresses

We report our KMC study on the effect of strain on B diffusion in silicon and relaxed SiGe layer by assuming a virtual strained structure with charged defect energy and diffusivity. The simulation results imply that boron diffusion is drastically retarded in a strained Si and relaxed SiGe when compared to a case with unstrained silicon. We also derived the distribution of physical stress along the heterojunction interface with varying the Ge implant for giving rise to a strain to the pure silicon.

Back to Program

Sessions Sunday Monday Tuesday Wednesday Thursday Authors Keywords

Nanotech 2007 Conference Program Abstract


Names, and logos of other organizations are the property of those organizations and not of NSTI.
This event is not open to the general public and NSTI reserves the right to refuse admission and participation to any individual.