2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Carbon Nanotube Transistors with 60mV/decade Switching and its Capacitance Measurement

Y. Lu, H. Dai and Y. Nishi
Stanford University, US

carbon nanotube, FET, capacitance, mobility

Recently, we have been able to approach the ultimate vertical scaling limit of carbon nanotube field effect transistors (FETs) and reliably achieve S ~ 60 mV/decade at room temperature, by non-covalent functionalization of single walled carbon nonotubes (SWNTs) with ploy-T DNA molecules, which can impart functional groups of sufficient density and stability for uniform and conformal ALD of high-? dielectrics (HfO2) with thickness down to 2-3 nm on SWNTs. Moreover, the small top gate stack capacitance (~300aF/um) of the SWNT FET has been successfully measured directly, using a special technique. The mobility of the SWNT FETs at room temperature is also extracted by the capacitance measured directly.

Back to Program

Sessions Sunday Monday Tuesday Wednesday Thursday Authors Keywords

Nanotech 2007 Conference Program Abstract


Names, and logos of other organizations are the property of those organizations and not of NSTI.
This event is not open to the general public and NSTI reserves the right to refuse admission and participation to any individual.