2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Design and Characterization of new GaAs Micromechanical Thermal Converter developed for Microwave Power Sensor

J. Jakovenko, M. Husak and T. Lalinsky
Czech Technical University in Prague, Faculty of Electrical Engineering, CZ

MEMS, thermal converter, GaAs, power sensor

In this report we demonstrate the design of new GaAs based Micromechanical thermal converter (MTC) that creates heart of the RF power sensor microsystem. Transmitted power is the main quantity measured in RF systems. The classical approach to transmitted power measurement is based on the measurement of absorbed power waves (incident and reflected) that requires sophisticated multiple power meter structures and need complex calibration. A better technique of absorbed power measurement is based on thermal conversion, where absorbed RF power is transformed into thermal power, inside a thermally isolated system. The temperature changes induced in the MTC by electrical power dissipated in the HEMT (High Electron Mobility Tranzistor) are sensed using the temperature sensor.

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