2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Numerical Modeling for Comparison of Emitter-Base Designs of InGaP/GaAs Heterojunction Bipolar Transistors

J.M. Lopez-Gonzalez
Universitat Politecnica de Catalunya, ES

numerical modeling, HBT, InGaP/GaAs

In this work it is investigated the consequences of the design of the emitter pedestal in the electric DC and AC performance of GaInP/GaAs HBTs using numerical modeling TCAD tool. Two different HBTs are studied and compared, DEV-A and DEV-B. Particular dimensions of the device DEV-A are: spacing between emitter mesa and base contact, LBE, is 1.3 um, emitter pedestal area is APE = 2 x 20 um2 and emitter contact area, AE, is 1 x 20 um2. DEV-B geometry is: LBE = 1 um, APE = 2.6 x 20 um2 and AE = 2 x 20 um2. Device total size and base mesa structure of these HBTs are identical. DC and AC operation parameters as: forward gain current, offset collector-emitter voltage, maximum transducer gain and the maximum stable gain are presented and explained.

Back to Program

Sessions Sunday Monday Tuesday Wednesday Thursday Authors Keywords

Nanotech 2007 Conference Program Abstract


Names, and logos of other organizations are the property of those organizations and not of NSTI.
This event is not open to the general public and NSTI reserves the right to refuse admission and participation to any individual.