2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

An Approximate Carrier-Based Compact Model for Fully Depleted Surrounding-Gate MOSFETs with Finite Doping Body

J. He, F. Liu, W. Bian, Y. Tao, W. Wu, K. Lu, T. Wang and M. Chan
Peking University, CN

compact modeling, non-classical MOSFETs, device physics, circuit simulation

An explicit carrier-based model for the undoped SRG MOSFETs has been developed by an accurate yet analytic carrier concentration approximation. This new explicit model requires no numerical iteration but more accurate and computation efficient, thus it is more suitable to implement SRG MOSFET model into the circuit simulators for circuit design and application.

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Nanotech 2007 Conference Program Abstract


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