2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

A Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs

J. He, W. Bian, Y. Tao, B. Li and Y. Chen
Peking University, CN

compact modeling, non-classical MOSFETs, device physics, circuit simulation

A carrier-based analytical model for undoped (lightly doped) UTB-SOI MOSFETs is derived by solving the Poisson equation coupled to the Pao-Sah current formulation. It is also shown that the predicted I-V characteristics are in complete agreement with 2-D numerical simulation results without any fitting term or parameter

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Nanotech 2007 Conference Program Abstract


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