2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Avoiding self-heating effects and measurement errors on nanoscale devices using Pulse I-V techniques

J. Tucker
KeithleyInstruments, Inc., US

Nanoelectronics, characterization

Nanoelectronics is a rapidly developing field with potential impact across a wide range of industries. Devices such as carbon nanotubes, semiconductor nanowires, graphene-based electronics, molecular organic-based electronics, and single electron devices are routinely researched and characterized today. Characterizing the electrical properties of these delicate nanoelectronic components and materials requires instrumentation and measurement techniques optimized for low power measurements. Low temperature materials, nanodevices, and sub-micron silicon structures can be easily be altered or even destroyed by the heat generated from excessive power sourced by the instrumentation that is used to measure resistance (R) and I-V characteristics. Traditional DC techniques are also not adequate to reveal how devices really operate. Consequently, different testing techniques are needed for the new era of nanoelectronic devices. One such technique is known as pulse testing. Pulsed electrical testing is a measurement technique that reduces the total energy dissipated in a device, and thus the potential for damage. The device under test (DUT) is excited for a very short interval with a source high enough to produce a quality measurable signal and then the source is removed. This type of pulsed testing is essential for the next generation of “beyond CMOS” nanoelectronic devices. This presentation will review pulse testing techniques and equipment to solve these measurement challenges.

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