2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Applications of X-ray Measurement Techniques in Nano-Scale Semiconductor Device Manufacturing

D. Agnihotri
Jordans Valley Semiconductors, US

X-ray measurement, nano-scale semiconductor device manufacturing

As semiconductor devices shrink to nano-scale regime, ultra-thin films (nm to few hundred nm) are deposited during manufacturing. These films require very stringent control for optimum performance of semiconductor devices. At the same time, new materials are adopted for gate stack, capacitors, inter-layer dielectrics, electrodes and inter-connects. Existing measurement techniques like opto-acoustics, sheet resistivity and spectroscopic ellipsometry struggle to accurately measure these films and stacks. In addition to thickness measurements, other material properties like, phase, texture, and strain are becoming equally important. X-ray based methods have quickly evolved to fill the gap. Recent improvements in x-ray technology allowing high-throughput, small-spot, product wafer measurements has spurred a rapid adoption of x-ray based metrology in fabs. This talk will review basics of x-ray fluorescence [XRF], x-ray diffraction [XRD], and x-ray reflectivity [XRR] techniques. In addition, details of recent technology improvements for XRF, XRD and XRR (x-ray optics, detectors, analysis algorithms, array based high resolution detectors) will be discussed. A brief review of various thin-film semiconductors applications (Logic, DRAM, Flash) will also be included.

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Nanotech 2007 Conference Program Abstract


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