2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Double-Gate Thin-Base MOS Transistor: Characteristics for the Long Channel

B.B. Jie and C-T Sah
University of Florida, US

MOS transistor, double gate

Electrical characteristics of the double-gate thin-base MOS transistor are computed from the correct analytical solution for the asymptotically long-wide channel. Characteristics are computed for the impure base and the pure base limit, and for all combinations of the voltages applied to the four terminals (two gates and two contacts to the full base thickness of two ends of the channel) and other contact configurations, including a remote contact to the width-extended thin base beyond the coverage by one or both gates. Numerical results from computer calculation using the analytical model and from back-of-the-envelope calculation are given. They confirm the large errors, which are eyeballing obvious from the surface-potential-controlled simple resistances, in both the high current (drift current) and subthreshold current (diffusion current) ranges, from the erroneous analyses made for the pure-base transistor which were recently reviewed (2007) by Ortiz-Conde, Garcia-Sanchez, and Juin J. Liou [1] which are based on the one-carrier Yuan Taur’s 2000 single-carrier model [2] which everyone followed beyond its limit. The bipolar current components of drift and diffusion, hence four current components, are illustrated to help understand the current transport physics, which were well-known in the ancient (~1950) theories of current transport in insulators and low conductivity materials and devices. The fundamental Debye Length LDi [3-6] limitation is illustrated analytically via asymptotic expansion.

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Nanotech 2007 Conference Program Abstract


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