2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

1.55 um quantum dot laser for 2.5 Gbps operation

B.S. Choi, E.D. Sim, C.W. Lee, J.S. Kim, H.-S. Kwack and D.K. Oh
Electronics and Telecommunications Research Institute, KR

quantum dot, 2.5 Gbps, 1.55 um, DFB

In this experiment 7 stacked QD layers with the dot density of 2 X 1010/cm2 were grown on an InP substrate with the grating structure and processed to be ridge waveguide type laser diode. Unlike our former result, we grew the InAs quantum dots between the InGaAsP quantum well using a metal-organic chemical vapor deposition (MOCVD) to make commercially viable device. By optimizing the quantum well band height and thickness, facet coating, and grating, we got the threshold current of 20 mA and side mode suppression ratio of 49.5 dB in the figure 1. These static characteristics are comparable to those of the quantum well devices. Devices with 0.3 cavity length are packaged in commercial TO modules to check the high frequency characteristics. In the figure 2 we can see the 3-dB bandwidth of 4.37 GHz at the bias current of 60 mA and the sensitivity of -29 dBm at the bit error rate of 10-10. The life time of our devices is calculated to be 66 years under the normal operation condition. From these data and considering its superior chirp performance, we can determine that our 1.55 m quantum dot laser diodes can be used as the commercial devices for the 2.5 Gbps direct data transmission

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Nanotech 2007 Conference Program Abstract


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