2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Deformation induced by nanoscale contact loading in semiconductor materials

D.E. Kim and S.I. Oh
Seoul National University, KR

Structural phase transformation, silicon, gallium-arsenide, nanoindentation

Since all essential properties of semiconductor materials are structure-sensitive, the understanding of deformed structures which may be present in nanodevices is very crucial. To investigate the deformation mechanism and the corresponding structures, nanometer-scale contact loading simulations are carried out using molecular dynamics in silicon and gallium-arsenide. In our simulations, structural phase transformation is identified as the principle deformation mode in both materials, and their phase transformations show similar anisotropic behavior according to the crystallographic orientation of the contact surface. However, we show that their microscopic aspects of phase transformation are quite different to each other.

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