2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Si SET-based Flexible Multi-valued Two-input NAND Logic Gates

C.K. Lee, S.J. Kim, J.H. Hwang and J.B. Choi
Chungbuk National University, KR

Si-based SET, Coulomb-blockade devices, multi-valued NAND logic gate, flexible functionality

We report on the first successful fabrication of silicon-based flexible multi-valued two-input NAND gate on a SOI chip.The periodic high/low feature in VOUT in a grayscale contour plot as a function of two SET input voltages corresponds to blockaded/tunneling current regimes; high for both SETs blockaded, while low for one or both SETs tunneled-through. Its input-output voltage transfer characteristics displays typical NAND gate function for various binary or multi-valued two SET input. Moreover, the switching functionality of our SET logic gate can be enhanced to OR operation by utilizing a side gate incorporated to each SET.

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