2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Indium Selenide Nanowires: Synthesis, Characterization and Device Fabrication

G. Ng, X. Sun and L. He
San Jose State University, US

nanowires, InSe, memory devices

The synthesis and characterization of indium selenide (In2Se3) nanowires (NWs), and the fabrication of prototype memory devices using these NWs, are reported. The NWs were synthesized using a catalyst assisted physical vapor deposition method (PVD) in a closed system, two zone furnace. The morphology and structure of the as-synthesized In2Se3 NWs have been characterized by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) with energy dispersive x-ray spectroscopy (EDS). The as-synthesized In2Se3 NWs are a single crystalline, -phase hexagonal structure. A low melting point of 680 °C was measured and the vapor-liquid-solid (VLS) growth mechanism was confirmed through an in-situ heating experiment in the TEM. Subsequently, prototype devices were fabricated on a pre-patterned metal pad array on a silicon substrate covered with a 1000 Å silicon dioxide layer, which was created using traditional photolithography. Platinum contacts were made from the pads to the NWs using the focused ion beam (FIB) system. Finally, the resistivity of the In2Se3 NWs measured from these devices was found to be 8.33 cm.

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