2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

A Novel Nonvolatile Memory Using SiOx-Cladded Si Quantum Dots

R.S. Velampati and F.C. Jain
University of Connecticut, US

nonvolatile memory, quantum dots

This paper presents characteristics of a novel quantum dot gate nonvolatile memory (QDNVM) whose threshold shift can be varied by adjusting the duration and magnitude of the Programming Voltage pulse applied at the drain end. For example, in long-channel FET like structures, we observed a threshold voltage shift ( Vt) of 1 V for 10V/10 s stress pulse. Our preliminary data suggest: (i) faster 'Write' time and (ii) longer retention time for these devices as compared to conventional Si nanocrystal gate nonvolatile memories reported in the literature.

Back to Program

Sessions Sunday Monday Tuesday Wednesday Thursday Authors Keywords

Nanotech 2007 Conference Program Abstract


Names, and logos of other organizations are the property of those organizations and not of NSTI.
This event is not open to the general public and NSTI reserves the right to refuse admission and participation to any individual.