2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Growth of manganese oxide thin films using pulsed laser deposition

T. Christidis, S. Isber, E. Majdalani, K. Zahraman and B. Nsouli
American University of Beirut, LB

PLD, thin film, Manganese oxide

In this paper, we report on the growth of manganese oxides thin films by Pulsed Laser Deposition (PLD) of a MnO target at various oxygen pressures and temperatures deposition ranging from 550 to 900°C. Grazing Incidence X-ray diffraction measurements on the grown films revealed that at low deposition temperature the dominant phase is Mn2O3, and as the deposition temperature was raised above 700 °C a phase transformation occur and the deposited films were found to be Mn3O4. A qualitative comparison, in the temperature range of 500-850 °C and at pressure below 100 mTorr, between the phase diagram of bulk manganese oxides and our grown films revealed a fair correlation between both materials. The films grown at T = 700 °C were found to be very thin compared to those grown at lower and higher temperatures with a very high oxygen content as revealed by Rutherford Back Scattering (RBS) measurements. The analysis of the films surface morphology by Scanning Probe Microscopy (SPM) shows that the films grown near the transition temperature at 750 °C have the highest root-mean-square surface roughness. The nanostructure of the film is discussed in light of the X-ray diffraction and AFM results.

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