2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

High Frequency Characteristics of Nanoscale Silicon Nanowire FET

Y. Li and C-H Hwang
National Chaio Tung University, TW

high frequency, cutoff frequency, bandwidth, silicon nanowire FET, bulk FinFET, planar MOSFET, sub-32nm, mixed-mode, device-circuit coupled simulation

Nanoscale multigate field effect transistors (FETs) are potentially next-generation device candidates for achieving the high performance targets of the ITRS due to their superior reduction of the short channel effects and excellent compatibility with planar CMOS fabrication process [1, 2]. In this work, we for the first time numerically explore the high frequency characteristics of the sub-32nm silicon nanowire FET. Three-dimensional density-gradient device simulation directly coupling with circuit equations is simultaneously performed for the calculation of the property of the frequency response. Our preliminary result shows that the cut-off frequency of a well designed sub-32nm nanowire FET with 100% surrounding gate is greater than 1 THz, which substantially benefits from the nature of the infinite gate in the nanowire FET. By setting the same threshold voltage among the planar MOSFET, the bulk FinFET, and the nanowire FET, the mixed-mode device-circuit simulation shows that the sub-32nm nanowire FET and bulk FinFET exhibit the absolute superiority of the DC and high frequency characteristics over the conventional planar one. The bandwidth of the sub-32nm nanowire FET is about two and five times over the bulk FinFET and planar MOSFET, respectively. Silicon-based nanowire FET devices as active components in microwave circuits draw people’s attention for their extremely rich high frequency property [3]. The extensive results and analyses are presented on the promising devices for high frequency analog applications. [1] The International Technology Roadmap for Semiconductors. (2005). [Online]. Available: http://public.itrs.net/ [2] J.-P. Raskin et al., IEEE Trans. Elec. Dev., vol. 53, pp. 1088-1095, 2006. [3] P.-J. Burke, et al., Digest of 2005 IEEE MTT-S Int. Microwave Symp., pp. 12-17, 2005.

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