2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Fabrication of ZnO hybrid structures and light emitting diode applications

S.-H. Park, S.-Y. Seo, C.-H. Kwak, Y.-B. Lee, S.-H. Kim and S.-W. Han
Chonbuk National University, KR

ZnO nanorod, hybrid structure, LED

Vertically well aligned ZnO nanorod arrays with a diameter of 50 - 150 nm were fabricated on Al2O3 substrates with and without GaN interlayers, and consequently covered with a crystalline ZnO film in-situ by a catalyst-free metal-organic vapor-phase epitaxy (MOVPE) method. X-ray diffraction and field-emission transmission electron microscopy measurements revealed that the ZnO film/nanorods formed a single crystal with a WZ structure and lattice constant c of 5.2055 Å, which corresponded well with that of bulk ZnO. Neither extra superlattice reflection nor lattice mismatch between the ZnO film and nanorods was observed, implying the epitaxial growth of the ZnO film on the pre-grown ZnO nanorods. The surface roughness of the ZnO film/nanorods hybrid structures was determined to be about 3.0 nm by atomic force microscopy measurements. From n-ZnO film/nanorods/p-GaN heterojunctions, we observed a blue light emission with a wavelength of about 440 nm.

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Nanotech 2007 Conference Program Abstract


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