2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

3-D Analytical Models for the Short-Channel Effect Parameters in Undoped FinFET Devices

H.A. Hamid, B. Iniguez and J. Roig
Universitat Rovira i Virgili, ES

3D Poisson’s equation, undoped FinFET, conduction path, threshold voltage, roll-off, subthreshold swing

We present 3-D analytical models for subthreshold swing, threshold voltage and threshold volatge roll-off of undoped FinFET devices. After solving the 3-D Poisson equation, in which the mobile charge term was included, we have obtained an expression of the electrostatic potential through the device. We have validated the threshold voltage, subthreshold swing, and threshold voltage roll-off models by comparison with 3-D numerical simulations and measured values; a good agreement with both 3-D numerical simulation and the experimental results has been observed.

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