2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Rational Synthesis of P-type Zinc Oxide Nanowire Arrays

B. Xiang, P.i Wang, X. Zhang, S.A. Dayeh, D.P.R. Aplin, C. Soci D. Yu and D. Wang
University of California, San Diego, US

ZnO, nanowire, light emitting diode

We report the synthesis of the high-quality p-type ZnO NWs using a simple chemical vapor deposition method, where phosphorus pentoxide has been used as the dopant source. Single crystal phosphorus doped ZnO NWs have growth axis along the direction and form perfect vertical arrays on a-sapphire. P-type doping was confirmed by photoluminescence measurements at various temperatures and by studying the electrical transport in single NWs field-effect transistors. Comparisons of the low temperature PL of unintentionally doped ZnO (n-type), as-grown phosphorus doped ZnO, and annealed phosphorus doped ZnO NWs show clear differences related to the presence of intra-gap donor and acceptor states. The electrical transport measurements of phosphorus doped NW FETs indicate a transition from n-type to p-type conduction upon annealing at high temperature, in good agreement with the PL results. The cross NW ZnO homojunction nano-LED and core-shell heterostructure device will be also discussed. The synthesis of p-type ZnO NWs enables novel complementary ZnO NW devices and opens up enormous opportunities for nanoscale electronics, spintronics, optoelectronics, and medicines.

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Nanotech 2007 Conference Program Abstract


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