2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Gallium Nitride Nanowire Electronic and Optoelectronic Devices

A. Motayed, A.V. Davydov, M. He, J. Melngailis and S.N. Mohammad
National Institute of Standard and Technology, US

GaN, nanowire, nanowire FET, nanowire LED

GaN nanowires grown using direct reaction of NH3 and metal Ga were aligned on prepatterned SiO2 coated Si substrates using dielectrophoresis. This was followed by a fabrication sequence to form stable nanowire device structures. The present technique utilizes only standard fabrication processes like photolithography, etching, and oxide deposition, and is potentially compatible with CMOS technology. Present scheme resulted in the nanowire devices embedded in a SiO2 passivation layer, which have shown to minimize the surface effects, thus improving device performances. Reliable GaN nanowire field effect transistors (FETs), with Si substrate as the backgate, have been routinely achieved using this technique. Nanowire FET mobilities over 300 cm2 V-1 s-1 at 300 K have been measured in these devices. Mobilities calculated from these reliable nanowire field effect transistors indicated that surface scattering plays a dominant role in the transport. Results indicated that smaller diameter nanowires had lower mobilities than larger diameter nanowires. Top gate nanowire transistors with high k dielectrics like HfO2, Al2O3, and ZrO2 have also been investigated. Utilizing the same technique, nanoscale GaN ultraviolet light emitting diodes (LEDs) have been realized with peak emission wavelength of 365 nm and full width half maximum of 25 nm.

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Nanotech 2007 Conference Program Abstract


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