2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Effect of N Incorporation on the Photoluminescence Characteristics of GaAsSb(N)/GaAs Single Quantum Well Structures and Light Emitting Device Beyond 1.55 ?m

K. Nunna, S. Iyer, J. Li and W. Collis
North Carolina Agricultural and Technical State University, US


Effect of N incorporation on the optical properites such as the photoluminescence characteristics of GaAsSb(N)/GaAs single quantum well structures has been studied. Elelctroluminescence has been observed in the wavelength range of 1.55-1.82 microns range at 10K.

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Nanotech 2007 Conference Program Abstract


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