2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Design-Oriented Characterization and Parameter Extraction Methodologies for the EKV3 MOSFET Model

M. Bucher, A. Bazigos, D. Diamantakos and F. Krummenacher
Technical University of Crete, GR

analog design, MOSFET compact model, parameter determination, characterization methods, EKV3 model

The present paper reviews analog design-oriented characterization techniques and parameter extraction strategies developed in the context of the EKV3 MOSFET model. The scaling of design-related quantities, such as threshold voltage, slope factor, transconductance-to-current ratio, Early voltage, intrinsic gain etc. versus geometry and temperature in advanced CMOS processes is investigated. These quantities address not only strong inversion but also the ever more important moderate and weak inversion regions of operation. Parameters of the EKV3 model may favourably be extracted and fine-tuned using these quantities. Parameter extraction sequences for determining the key parameters of the EKV3 model based on the above methods are discussed and compared to extraction based on traditionally available data.

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