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Phenyl–Terminated Self Assembled Monolayers on Si(100) for Low Voltage Transistor Applications

A. Sim, J. Harper, H. Zareie, M. James and N.K. Singh
The University of New South Wales, AU

self assembled monolayers, organic field effect transistors, nanohybrid architectures

A key problem with the existing thin film organic field effect transistor is their large operating voltage (> 20 V) due to the relatively thick (>100 nm) dielectric layer (e.g. SiO2,) which restricts their in applications such as electronic bar codes and smart cards. Efforts to reduce the dielectric thickness have not been successful, as silica for example with thickness < 5 nm has serious problems with leakage currents. A solution to this problem is to eliminate oxides as the dielectric material and use alkyl chains in self-assembled monolayers instead. The current leakage through these alkyl chains is remarkably low, despite their thickness of only a few nanometres. Aryl–terminated alkyl self assembled monolayers deposited onto oxide-free silicon, forming dense and stable organic–inorganic nanohybrid architectures, offer promise of a transistor that can be operated at low voltages. Additionally the use of aryl terminal groups with increasing p–surface area (phenyl < naphthyl < anthracenyl etc) will allow control over the electron mobilities in these transistors.
In this paper we describe the formation and properties of two such organic–inorganic nanohybrid architectures comprising phenyl-terminated alkyl self-assembled monolayers (C3 and C9 alkyl chain lengths) on hydrogen-terminated Si(100).

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