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Surface Reactions of Linear Atomic Metal Wire Complexes

C-H Lung and C-C Chang
National Taiwan University, TW

nanowire, linear atomic metal chain, chemical vapor deposition, surface reaction, metal-semiconductor chemistry

The communication among nanostructures and between these structures and the outside world becomes very critical as the key features in electronics devices continue to shrink in the double-digit nanometer regime. To explore the possible formation of molecular metal wires by CVD of organometallic chelates, the present work studies the adsorption, growth and the bonding configuration involved in the reaction, on the semiconductor surface, of the chelate which contains the linear atomic metal chain. Studies using synchrotron radiation-induced XPS, SIMS, and TPD showed that the pyridylamino trinuclear chromium chelate strategically prepared may anchor on the GaN(0001) surface, with the chain axis oriented away from the surface, even at a low substrate temperature of 110 K. The chain axis may be inclined toward the surface at high doses. Increasing the substrate temperature not only caused a change of the bonding geometry of the metal string on the surface but also induced decomposition of the chelate in two different stages. Desorption of the dipyridylamino ligand occurred at 340 K, while disruption of the chromium string occurred at 540 K. The chemical bonding and the reaction chemistry involved in the formation of the linear metal atom wire will be discussed.

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