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Spectroscopic and Structural Studies of Wide-Bandgap III-Nitride Nanorods and Nanowires

N.A. Sanford, J.B. Schlager, J.M. Barker, M.H. Gray, A. Roshko, J.E. Van Nostrand, C.E. Stutz, R. Cortez, M. He and A. Motayed

nanowires, nanorods, gallium nitride, III-nitrides, wide-bandgap semiconductors, NSOM, confocal microsocpy, multiphoton spectroscopy

Nanowires fabricated in wide-bandgap III-nitrides are receiving considerable attention because of their potential for realizing structures with very low defect densities that may enable new applications in UV optoelectronics. We have grown GaN nanorods on c-plane sapphire substrates by plasma-assisted molecular-beam epitaxy. Nanorod samples grown with and without InGaN quantum wells were produced and studied. In addition, GaN nanowires grown by the direct reaction of Ga with ammonia were also fabricated. In order to quantify these nanostructures and assess their down-stream utility for UV optoelectronic devices and other potential applications, high-resolution microscopy, spectroscopy, and structural analysis must be performed. We have studied these materials using high-spatial-resolution spectroscopy (including NSOM, cathodoluminescence, and nonlinear multiphoton confocal microsocopy), X-ray diffraction, AFM, TEM, and have prepared samples for transport measurements via the direct writing of metal contacts to nanowires using FIB. Details and results of these investigations will be presented at the meeting.

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