Nano Science and Technology InstituteNano Science and Technology Institute
Nano Science and Technology Institute 2005 NSTI Nanotechnology Conference & Trade Show
Nanotech 2005
Bio Nano 2005
Business & Investment
Nano Impact Workshop
Index of Authors
Index of Keywords
Keynote Presentations
Confirmed Speakers
Participating Companies
Industry Focus Sessions
Nanotech Expo
Special Symposia
Venue 2005
Press Room
Site Map
Nanotech 2005 At A Glance
Nanotech Proceedings
Nanotechnology Proceedings
Global Partner
nano tech
Supporting Organizations
Nanotech 2005 Supporting Organization
Media Sponsors
Nanotech 2005 Medias Sponsors
Event Contact
696 San Ramon Valley Blvd., Ste. 423
Danville, CA 94526
Ph: (925) 353-5004
Fx: (925) 886-8461

Frequency Stability and Noise Characteristics of Ultra-High Frequency (UHF) Nanoelectromechanical Resonators

X.L. Feng and M.L. Roukes
California Institute of Technology, US

NEMS, resonator, mass sensor, oscillator, frequency stability

Nanoelectromechanical systems (NEMS) are emerging as great candidates for a variety of technological applications ranging from sensors and actuators to signal processing and communications [1]. Nanofabricated high-frequency (often in the VHF/UHF bands) electromechanical resonators (i.e., NEMS resonators) are promising to be the future on-chip high-Q resonators for frequency generation and conversion in wireless communication systems [2]. NEMS resonators’ high operating frequencies, small mass, and high-Q, also make them natural choices for resonant mass and force sensors with unprecedented sensitivities [3, 4]. However, new and elaborate engineering is crucial to realize the above projected applications. In particular, it is desirable to attain comprehensive understanding of the frequency stability [5] and noise processes [6] of NEMS resonators, the key factors that determine the ultimate performance and sensitivities of the systems. In this work, we present the initial experimental study of frequency stability and phase noise of UHF NEMS resonators. Generations of NEMS resonators with operating frequencies in the UHF band have been fabricated from high quality SiC epilayer grown on Si which is proven to be suitable for making RF and microwave resonators [7]. A low-noise frequency locking and tracking scheme has been developed to lock to the device resonance and perform real-time frequency tracking which is generic for oscillator and resonant mass sensor applications. This scheme allows us to characterize frequency stability and phase noise of the device with controlled environmental parameters. Allan deviation [5, 6], a standard measure of frequency stability, of generations of UHF NEMS resonators, are plotted and compared in Figure 4. Successful characterization of frequency stability and noise behavior of UHF NEMS resonators clearly illustrates the ultimate performance of NEMS resonant sensors and will lay the foundations for NEMS engineering.

Back to Program

Sessions Sunday Monday Tuesday Wednesday Thursday Authors

Nanotech 2005 Conference Program Abstract

Gold Sponsors
Nanotech Gold Sponsors
Silver Sponsors
Nanotech Silver Sponsors
Gold Key Sponsors
Nanotech Gold Key Sponsors
Nanotech Ventures Sponsors
Nanotech Ventures Sponsors
Nanotech Sponsors
News Headlines
NSTI Online Community

© Nano Science and Technology Institute, all rights reserved.
Terms of use | Privacy policy | Contact