Nano Science and Technology InstituteNano Science and Technology Institute
Nano Science and Technology Institute 2005 NSTI Nanotechnology Conference & Trade Show
Nanotech 2005
Bio Nano 2005
Business & Investment
Nano Impact Workshop
Index of Authors
Index of Keywords
Keynote Presentations
Confirmed Speakers
Participating Companies
Industry Focus Sessions
Nanotech Expo
Special Symposia
Venue 2005
Press Room
Site Map
Nanotech 2005 At A Glance
Nanotech Proceedings
Nanotechnology Proceedings
Global Partner
nano tech
Supporting Organizations
Nanotech 2005 Supporting Organization
Media Sponsors
Nanotech 2005 Medias Sponsors
Event Contact
696 San Ramon Valley Blvd., Ste. 423
Danville, CA 94526
Ph: (925) 353-5004
Fx: (925) 886-8461

Ferroelectric Properties of FIB-prepared Single Crystal BaTiO3 Nanocapacitors

A. Schilling, MM. Saad, P. Baxter, TB. Adams, RM. Bowman, JM. Gregg, FD. Morisson and JF. Scott
Queen's University, Belfast & Nanotec NI, UK

ferroelectric, barium titanate, dielectric constant

Measurements on free standing single crystal barium strontium titanate capacitors made using focused ion beam micromachining with thicknesses down to 75 nm, show a dielectric response typical of large single crystals, rather than conventional thin films. There is a notable absence of any broadening or temperature shift of the dielectric peak or loss tangent; peak dielectric constant of ~25, 000 are obtained and Curie-Weiss analysis demonstrates 1st order transformation behaviour (Figure 1). This is in major contrast to results on conventionally deposited thin film capacitor structures which show large dielectric peak broadening and temperature shifts, as well as apparent change in nature of the paraelectric-ferroelectric transition from 1st to 2nd order. The data are compatible with recent models models, which attribute dielectric peak broadening to gradient terms that will exist in any thin film capacitor heterostructure, either through defect profiles introduced during growth, or through subtle asymmetry between top and bottom electrodes. These results and implications for data used to derive likely performance parameters in future down-scaling of FRAM devices into the nanoscale will be discussed.

Back to Program

Sessions Sunday Monday Tuesday Wednesday Thursday Authors

Nanotech 2005 Conference Program Abstract

Gold Sponsors
Nanotech Gold Sponsors
Silver Sponsors
Nanotech Silver Sponsors
Gold Key Sponsors
Nanotech Gold Key Sponsors
Nanotech Ventures Sponsors
Nanotech Ventures Sponsors
Nanotech Sponsors
News Headlines
NSTI Online Community

© Nano Science and Technology Institute, all rights reserved.
Terms of use | Privacy policy | Contact