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Optimized Threshold-Voltage MOS Transistor Compact Model from the 4-Component Theory

B.B. Jie and C-T Sah
University of Florida, US

space-charge-limited, four-component exact formulation, optimization voltage

Based on Sah's 1996 four-component exact formula, a new optimized compact model is derived for long channel MOS transistors. This new model covers subthreshold and linear operation ranges using four independent optimization voltage parameters in the four components which are: parabolic space-charge-limited drift current, bulk-charge depressment of drift current, linear space-charge-limited diffusion current, and bulk-charge enhancement of diffusion current. By comparison of the four current components computed using the 1996 Sah exact formula and the optimized compact model, the four optimization voltages are extracted over operation drain voltage range. The RMS deviation is then obtained for the impurity concentration and oxide thickness matrix. With the extracted optimization voltage parameters, this new model has only one parameter to fit any experimental long channel transistor characteristics, which is the effective substrate dopant-impurity concentration with a known oxide thickness .

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