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Unified Regional Charge-based MOSFET Model Calibration

G.H. See, S.B. Chiah, X. Zhou, K. Chandrasekaran, W. Shangguan, S.M. Pandey, M. Cheng, S. Chu and L-C Hsia
Nanyang Technological University, SG

implicit surface potential, unified regional, charge

This paper presents a methodology to extract device physical parameters, i.e., electrical oxide thickness (tox), channel doping (Nch), and poly-gate doping (Ngate), as well as smoothing parameters in our unified regional charge-based model [1] with only one gate capacitance (Cgg) data. The interpolation parameters are fitted to satisfy charge neutrality at flat-band condition as well as continuity across regions of operation near flat-band (Vfb) and threshold voltage (Vt), including higher-order derivatives. Through a one-iteration calibration approach, our unified regional charge-based model can predict accurately the experimental data from a 0.11-_m CMOS technology. Compared with iterative/explicit surface-potential models [2], [3], which often requires optimization techniques such as genetic algorithm due to parameter correlation, our unified regional approach has the advantage of less parameter dependency since physical parameters are uncorrelated to the smoothing parameters

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